Our Technologies
Developing New Technical Materials
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Contracts
- 2005-7 HQ0006-05-C-7110 Membrane technology for Radiation Hard Electronics.
- 2003 DA972-03-C-0019 DARPA MTO BAA SPARWARSYSCEN Research Contract
- 2003 HQ0006-03-C-0071 MDA Phase I: Strained GaN Device Technology.
- 2003 HQ00006-03-C-0029 MDA SBIR Phase I: Ge-Free Strained Silicon.
- 2002 DASG60-02-P-0108 MDA SBIR Phase I: Strain-Enhanced Tunnel Diode Technology
- 2001 N00014-01-C-0164 ONR BAA Research Contract for research into Strained Si MOSFETs.
- 2001 DASG60-01-C-0039 BMDO, SBIR Phase II: Next-Again-Generation Radiation Hard
- 2000 BMDO SBIR Phase I: Next-Again-Generation Radiation Hard CMOS.
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Patents
- US Patent No. 6,514,836 Rona E. Belford, Feb 2003.
- US Patent No. 6,455,397 Rona E. Belford, Sept 2002.
- UK Patent GB 2 295 R E Belford and P C W Brehier, 1998.
- US Patent 5,725,754, R E Belford, 1998.
- UK Patent GB 2 295 677, R E Belford 1998.
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Publications
- Rona Belford and Sumant Sood, Microsystem Technologies: Vol. 15(3), 407 (2009).
- R. E. Belford, Q. Xu, A. Acosta, S. Sood and L. Lu IEEE Trans 2007.
- R. E. Belford and S. Sood Electrochem S-S Letters, Vol 10, (5) H145-H148, 2007.
- Sumant Sood and Rona Belford, "Strained silicon via plasma enhanced dCTE bonding”, ECS Transactions, Vol. 3 (6), 99-106, (2006).
- R. E. Belford, et al., J. Appl. Phys. 100, 064903 (2006).
- Sumant Sood and Rona Belford, ECS Transactions, Vol. 2 (4), 23-29, (2006).
- B. M. Haugerud, Mustayeen, B. Nayeem, R Krithivasan, Y Lu, C Zhu, J.D. Cressler, R.E. Belford, Alvin J. Joseph, Solid-State Electronics 49 pp 986–990 2005.
- R. E. Belford et al., “Elevated-Temperature Electrical Characteristics of Mechanically Strained-Si Devices” J. Appl. Phys. Vol. 95, No. 1 pp 2792-2796, Mar 2004.
- W Zhao, J He, R Belford, L-E Wernersson, and A Seabaugh, IEEE Trans. Electron Devices, Vol. 51, No. 3, pp 317-323, March 2004.
- R. E. Belford et al., J. Appl. Phys. Vol. 94, No.6 pp 4102-4107, 2003.
- Rona E. Belford, Wei Zhao; J. Potashnik,Qingmin Liu and Alan Seabaugh, "Performance-augmented CMOS using back-end uniaxial strain" Device Research Conference, 2002, 60th DRC. 24-26 June 2002, Conference Digest Page(s): 41 - 42.
- R E Belford, “Uniaxial, Tensile Strained-Si Devices”, J. Elect. Mat., Vol. 30, No.7, 2001.
- Conference Presentations
- Sumant Sood and Rona Belford, International Symposium on Semiconductor Wafer Bonding, Cancun Mexico, Oct/ Nov 2006.
- Rona Belford, Qing Xu, Sumant Sood, et al, 2006 IEEE International SOI Conference, New York, poster presentation, Oct 2-5 2006.
- Sumant Sood and Rona Belford, "Surface Activation Using Remote Plasma for a New Wafer Bonding Route to Strained-Si", 209th Electrochem.Soc MeetDenver, May 2006.
- Rona Belford, "No Strain, No Gain", invited paper, IEEE International Electron Device Materials Colloquium, Orlando, Feb 2006.
- Rona E. Belford, Wei Zhao, Jim Potashnik, Qingmin Liu, and Alan Seabaugh, “Performance Augmented CMOS Using Back-End Uniaxial Strain” Device Research Conference, June 2002.
- Rona E Belford, “Strained Si Compliant Substrates”, invited paper, International Conference on Alternative Substrate Technology, Lake Tahoe Jan 2001.
- R E Belford "Optical and Photodissolution Phenomena In IR Glasses", invited seminar given at the Dept. of Physics, University of South Carolina USA, 1993.
- R E Belford and A E Owen "Chalc Glasses in IR Diffraction Optics" Gordon Research Conference on "Optical Phenomena in Glass" at Tilton, New Hampshire USA 1992.
- R E Belford "Novel Glasses for Sensor and Optical Thick-Film Devices” invited paper at The Solid Sensors Conference, University of Southampton, England, 1992.